? semiconductor components industries, llc, 2005 december, 2005 ? rev. 6 1 publication order number: mj14001/d mj14001 (pnp), mj14002* (npn), mj14003* (pnp) *preferred devices high?current complementary silicon power transistors designed for use in high?power amplifier and switching circuit applications. features ? high current capability ? i c continuous = 60 amperes ? dc current gain ? h fe = 15?100 @ i c = 50 adc ? low collector?emitter saturation voltage ?v ce(sat) = 2.5 vdc (max) @ i c = 50 adc ? pb?free packages are available* maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage mj14001 mj14002/03 v ceo 60 80 vdc collector?base voltage mj14001 mj14002/03 v cbo 60 80 vdc emitter?base voltage v ebo 5.0 vdc collector current ? continuous i c 60 adc base current ? continuous i b 15 adc emitter current ? continuous i e 75 adc total power dissipation @ t c = 25 c derate above 25 c p d 300 1.71 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +200 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 150 figure 1. power derating t c , case temperature ( c) 40 80 120 240 360 90 p d , power dissipation (watts) 210 0 160 200 0 30 270 330 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and m ounting techniques reference manual, solderrm/d. device package shipping ordering information mj14001 to?3 100 units/tray preferred devices are recommended choices for future use and best overall value. 60 ampere complementary silicon power transistors 60?80 volts, 300 watts mj14002 to?3 100 units/tray mj14003 to?3 100 units/tray http://onsemi.com MJ14003G to?3 (pb?free) 100 units/tray mj14002g to?3 (pb?free) 100 units/tray mj14001g to?3 (pb?free) 100 units/tray to?204 (to?3) case 197a style 1 marking diagram mj1400x = device code xx = 1, 2, or 3 g = pb?free package a = location code yy = year ww = work week mex = country of orgin mj1400xg ayyww mex
mj14001 (pnp), mj14002* (npn), mj14003* (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? ???? ???? ?????? ?????? ??? ??? ??????????????????????? ??????????????????????? thermal resistance, junction?to?case ???? ???? jc ?????? ?????? ??? ??? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ? ????????????????????? ? ??????????????????????? collector?emitter sustaining voltage (note 1) (i c = 200 madc, i b = 0) mj14001 mj14002, mj14003 ???? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ???? 60 80 ??? ? ? ? ??? ? ? ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) mj14001 (v ce = 40 vdc, i b = 0) mj14402, mj14003 ???? ? ?? ? ???? i ceo ???? ? ?? ? ???? ? ? ??? ? ? ? ??? 1.0 1.0 ??? ? ? ? ??? ma ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 60 vdc, v be(off) = 1.5 v) mj14001 (v ce = 80 vdc, v be(off) = 1.5 v) mj14002, mj14003 ???? ? ?? ? ? ?? ? ???? i cex ???? ? ?? ? ? ?? ? ???? ? ? ??? ? ? ? ? ? ? ??? 1.0 1.0 ??? ? ? ? ? ? ? ??? ma ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v cb = 60 vdc, i e = 0) mj14001 (v cb = 80 vdc, i e = 0) mj14002, mj14003 ???? ? ?? ? ???? i cbo ???? ? ?? ? ???? ? ? ??? ? ? ? ??? 1.0 1.0 ??? ? ? ? ??? ma ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? dc current gain (note 1) (i c = 25 adc, v ce = 3.0 v) (i c = 50 adc, v ce = 3.0 v) (i c = 60 adc, v ce = 3.0 v) ???? ? ?? ? ? ?? ? ???? h fe ???? ? ?? ? ? ?? ? ???? 30 15 5.0 ??? ? ? ? ? ? ? ??? ? 100 ? ??? ? ? ? ? ? ? ??? ? ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector?emitter saturation voltage (note 1) (i c = 25 adc, i b = 2.5 adc) (i c = 50 adc, i b = 5.0 adc) (i c = 60 adc, i b = 12 adc) ???? ? ?? ? ? ?? ? ???? v ce(sat) ???? ? ?? ? ? ?? ? ???? ? ? ? ??? ? ? ? ? ? ? ??? 1.0 2.5 3.0 ??? ? ? ? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? base?emitter saturation voltage (note 1) (i c = 25 adc, i b = 2.5 adc) (i c = 50 adc, i b = 5.0 adc) (i c = 60 adc, i b = 12 adc) ???? ? ?? ? ???? v be(sat) ???? ? ?? ? ???? ? ? ? ??? ? ? ? ??? 2.0 3.0 4.0 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) ???? ? ?? ? ???? c ob ???? ? ?? ? ???? ? ??? ? ? ? ??? 2000 ??? ? ? ? ??? pf 1. pulse test: pulse width 300 s, duty cycle 2.0%. 100 figure 2. maximum rated forward biased safe operating area v ce , collector?emitter voltage (volts) 1.0 2.0 3.0 5.0 7.0 100 20 3.0 10 20 50 0.5 0.1 dc i c , collector current (amp) 1.0 s 1.0 ms 0.2 0.3 0.7 1.0 2.0 5.0 7.0 10 50 30 70 70 30 wire bond limit thermal limit second breakdown limit t c = 25 c 5.0 ms mj14001 mj14002, mj14003 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 200 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 200 c. t j(pk) may be calculated from the data in figure 13. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mj14001 (pnp), mj14002* (npn), mj14003* (pnp) http://onsemi.com 3 v ce , collector?emitter voltage (volts) v ce , collector?emitter voltage (volts) 300 figure 3. dc current gain i c , collector current (amps) 0.7 1.0 2.0 3.0 20 200 30 h fe , dc current gain v ce = 3.0 v 100 7.0 5.0 10 3.0 5.0 10 20 70 50 figure 4. dc current gain 2.8 0.1 i b , base current (amps) 1.0 10 t j = 25 c 5.0 3.0 2.0 0.5 2.0 1.2 0.8 0.4 7.0 30 50 70 0 1.6 2.4 7.0 0.7 0.3 0.2 300 figure 5. collector saturation region i c , collector current (amps) 0.7 1.0 2.0 3.0 20 200 30 h fe , dc current gain 100 7.0 5.0 10 3.0 5.0 10 20 70 50 figure 6. collector saturation region 2.8 0.1 i b , base current (amps) 1.0 10 5.0 3.0 2.0 0.5 2.0 1.2 0.8 0.4 7.0 30 50 70 0 1.6 2.4 7.0 0.7 0.3 0.2 i c = 60 a t j = 25 c mj14002 (npn) mj14001, mj14003 (pnp) 2.8 0.7 i c , collector current (amps) 10 v, voltage (volts) t j = 25 c 50 30 20 5.0 2.0 1.2 0.8 0.4 0 1.6 2.4 70 7.0 2.0 1.0 figure 7. ?on? voltages v be(sat) @ i c /i b = 10 3.0 v be(on) @ v ce = 3.0 v v ce(sat) @ i c /i b = 10 2.8 0.7 i c , collector current (amps) 10 v, voltage (volts) t j = 25 c 50 30 20 5.0 2.0 1.2 0.8 0.4 0 1.6 2.4 70 7.0 2.0 1.0 figure 8. ?on? voltages 3.0 t j = ?55 c t j = 25 c t j = 150 c v ce = 3.0 v t j = ?55 c t j = 25 c t j = 150 c i c = 25 a i c = 10 a i c = 60 a i c = 25 a i c = 10 a v be(sat) @ i c /i b = 10 v be(on) @ v ce = 3.0 v v ce(sat) @ i c /i b = 10 typical electrical characteristics
mj14001 (pnp), mj14002* (npn), mj14003* (pnp) http://onsemi.com 4 figure 9. turn?on switching times figure 10. turn?off switching times figure 11. capacitance variation figure 12. switching test circuit 4.0 i c , collector current (amps) 0.04 2.0 1.0 0.3 t r 3.0 0.7 0.1 0.07 c, capacitance (pf) 5000 3000 10000 2.0 3.0 7.0 100 20 1.0 2000 1000 700 500 300 200 100 5.0 10 50 v r , reverse voltage (volts) t, time (ms) 1.0 0.01 0.02 0.1 r(t), transient thermal resistance (normalized) 2.0 10 100 r jc(t) = r(t) r jc r jc = 0.584 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc(t) p (pk) t 1 t 2 single pulse 1000 d = 0.5 0.5 0.2 0.07 duty cycle, d = t 1 /t 2 figure 13. thermal response t, time (s) mj14002 (npn) mj14001, mj14003 (pnp) i c , collector current (amps) 1.0 2.0 3.0 7.0 5.0 0.5 0.3 1.0 0.2 0.1 0.07 0.05 0.03 0.02 0.01 t, time (s) 0.7 0.7 10 20 30 70 50 1.0 2.0 3.0 7.0 5.0 0.7 10 20 30 70 50 0.2 0.5 c ob 7000 30 70 0.02 0.03 0.05 0.7 0.3 0.03 0.05 0.07 1.0 5.0 3.0 2000 200 300 500 700 20 30 50 70 7.0 0.2 0.1 0.5 0.3 0.7 0.05 0.2 mj14002 (npn) mj14001, mj14003 (pnp) mj14002 (npn) mj14001, mj14003 (pnp) t d t s t f t j = 25 c c ib c ib c ob +2.0 v 0 t r 20 ns ?12 v 10 to 100 s duty cycle 2.0% v cc ?30 v to scope t r 20 ns r l r b v cc ?30 v r l r b to scope t r 20 ns v bb +7.0 v +10 v 0 ?12 v 10 to 100 s t r 20 ns duty cycle 2.0% for curves of figures 3 & 6, r b & r l are varied. input levels are approximately as shown. for npn circuits, reverse all polarities. 0.1 0.02 0.01
mj14001 (pnp), mj14002* (npn), mj14003* (pnp) http://onsemi.com 5 package dimensions to?204 (to?3) case 197a?05 issue k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.530 ref 38.86 ref b 0.990 1.050 25.15 26.67 c 0.250 0.335 6.35 8.51 d 0.057 0.063 1.45 1.60 e 0.060 0.070 1.53 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n 0.760 0.830 19.31 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ?t? seating plane 2 pl d m q m 0.30 (0.012) y m t m y m 0.25 (0.010) t ?q? ?y? 2 1 l g b v h u on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mj14001/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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